晶圓,是純硅(99.9999%)制成的一片片薄薄的圓形硅芯片。
因其形狀為圓形,故稱為晶圓。
立承德(NEXTECK)提供的晶圓分成半導體用硅晶圓材料和太陽能電池用硅晶圓材料兩種。
半導體用的硅芯片主要集中在4~6 inch,具體的規格如下:
Items 產品 | General Specification of Semiconductor Wafer | ||||||||
4 inch | 5 inch | 6 inch | |||||||
Resistivity(Ω/cm) 電阻率 | P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P- | ||||||||
N-Type doped: As, Phos, Sb, 0.001-1, 1-150 | |||||||||
Diameter tolerance(mm) 直徑公差 | ±0.2 | ±0.2 | ±0.2 | ||||||
Orientation 晶向 | (100), (111) | (100), (110), (111) | (100), (110), (111) | ||||||
Orientation tolerance 晶向公差 | ±0.15° | ±0.15° | ±0.15° | ||||||
Edge Profile | T/R | T/R | T/R | ||||||
Edge Condition邊緣條件 | 11/22 Ground | 11/22 Ground | 11/22 Ground/Polished | ||||||
Thickness(μm)厚度 | 300-650 | 400-650 | 550-750 | ||||||
Thickness tolerance(μm)厚度公差 | ±15 | ±15 | ±15 | ||||||
Backside Treatment | Etch | Poly | SiO2 | Etch | Poly | SiO2 | Etch | Poly | SiO2 |
Bow(μm)翹曲度 | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | |||
Warp(μm)彎曲度 | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | |||
Options 選項 | Laser marking, Poly-back, SiO2 seal, Back side damage |
提供的太陽能級別的晶硅產品可分為單晶硅和多晶硅兩種,我們可根據客戶的需求有不同的規格。一般的規格如下:
單晶硅晶圓規格 | 多晶硅晶圓規格 | |
Category 類型 | 156*156mm(Mono wafer單晶硅) | 156*156mm(Multi wafer多晶硅) |
Growing method | CZ | |
Type 種類 | P | P |
Dopant摻雜物 | Boron硼 | Boron硼 |
Crystal Orientation晶向 | <100>+/-3 deg | |
Carbon content含碳量(atom/cm3) | <5*1016 | <5*1017 |
Oxygen content含氧量(atom/cm3) | <1.1*1018 | <1*1018 |
Etch Pit Defects(/cm3) | <=3000 | |
Resistivity電阻率 | 0.5~3/3~6 | 0.5~3 |
Minority Carrier Lifetime少數載子生命周期(microsecond 微秒(μs) ) | >10 | >=2 |
Dimension(mm)體積 | 156+/-0.5 | 156+/-0.5 |
Thickness(μm)厚度 | 200+/-20 | 200+/-20 |
TTV 平整度(μm) | <=30 | <=30 |
Bow/Warp 翹曲度/彎曲度(μm) | <100 | <50 / <100 |
Surface Saw Damage Depth表面粗糙度(μm) | <=15 | <=20 |
Edge(Chip)邊緣(芯片) | Depth≤0.5mm | Depth≤0.5mm |
Vertical≤1.0mm | Vertical≤3.0mm | |
Defect≤2 | Defect≤2 |
立承德( NEXTECK )的各項產品都獲得長年的實積和信賴。用于半導體及電子零件的各種牌號非常齊全,對應各式各樣的成形方法,具有良好的成形性與尺寸精確度。